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T16M5T600B
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Product Detailed Parameters
- Description：THYRISTOR TO220AB TUBE 50PCS
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- Voltage - Off State：-
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The T16M5T600B is a silicon bidirectional thyristor (Triac) manufactured by Diodes Incorporated, housed in a TO-220AB package. It features a peak repetitive off-state voltage (VDRM/VRRM) of 600 V and an on-state RMS current rating of 16 A at a case temperature of +70°C. The device supports a peak non-repetitive surge current (ITSM) of 120 A and operates within a junction temperature range of -40 to +150°C. Electrical characteristics include a maximum gate trigger current (IGT) of 5.0 mA across quadrants Q1, Q2, and Q3, with a typical holding current (IH) of 3.0 mA. Thermal resistance from junction to case is 2.0 °C/W.
Feature Summary
- Sensitive gate architecture enables reliable triggering by microcontrollers and other low-power logic circuits.
- Uniform gate trigger current specification across operating quadrants Q1, Q2, and Q3 simplifies circuit design.
- Lead-free package construction complies with environmental standards.
Applications
- Solid-state relays
- Motor speed control circuits
- Lighting dimmer applications
Procurement Notes
Verify the component authenticity against the manufacturer's official datasheet specifications before integration. Confirm that the TO-220AB physical dimensions and pin assignments match the design requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance to maintain safe operating temperatures during operation.
Selection Notes
Select this component when a 600 V blocking voltage and 16 A RMS current capacity are required in a TO-220AB form factor. Consider the sensitive gate特性 if driving directly from low-current logic sources without additional buffer stages. Evaluate the thermal derating curves to ensure the RMS current rating remains sufficient under expected case temperature conditions.
Part Context
This Triac belongs to the family of sensitive gate silicon bidirectional thyristors designed for general-purpose AC switching applications. The device utilizes standard industrial packaging suitable for through-hole mounting. It is engineered to provide robust performance in environments requiring reliable phase control and power regulation.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalent part numbers. Ensure any replacement maintains identical voltage ratings, current capacities, and package dimensions to guarantee mechanical and electrical compatibility.
FAQ
What is the maximum gate trigger current specified for the T16M5T600B?
The maximum gate trigger current (IGT) is specified as 5.0 mA across quadrants Q1, Q2, and Q3.
How does the on-state RMS current rating change with case temperature?
The device is rated for 16 A RMS at a case temperature of +70°C. Derating curves indicate that the allowable current decreases as the case temperature increases beyond this point.
What is the thermal resistance from junction to case for this component?
The thermal resistance from junction to case (RthJC) is 2.0 °C/W.
