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The T2322B is a silicon bidirectional thyristor designed for AC power switching applications. It features a peak repetitive off-state voltage of 200 V and an on-state RMS current rating of 2.5 A at a case temperature of 70°C. The device supports a peak non-repetitive surge current of 25 A and operates within a junction temperature range of -40 to +110 °C. Electrical characteristics include a maximum gate trigger current of 10 mA, a typical holding current of 15 mA, and a thermal resistance from junction to case of 3.5 °C/W.
Verify the specific ordering suffix when purchasing components. The standard T2322B is supplied in a TO-225AA package with 500 units per box. An alternative version, T2322BG, indicates a lead-free package option available from the manufacturer. Confirm that the received part matches the required environmental compliance specifications before integration into the design.
Select this component for designs requiring sensitive gate drive capabilities compatible with low-power logic ICs. Ensure the application maintains the case temperature below 70°C to sustain the rated 2.5 A RMS current. Verify that the system's transient voltage does not exceed the 200 V blocking rating and that the thermal management strategy accommodates the specified junction-to-case thermal resistance.
This device belongs to the Sensitive Gate Triacs series manufactured by ON Semiconductor. It is classified as a silicon bidirectional thyristor intended primarily for AC power switching. The product documentation identifies it under publication number T2322/D, indicating its position within the manufacturer's discrete semiconductor portfolio for general-purpose control applications.
The T2322BG serves as a direct lead-free variant of the T2322B within the same package style. Designers should verify pinout compatibility and electrical parameter equivalence when substituting between standard and lead-free versions of this specific triac family member.