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T2851N52TOHXPSA1
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Product Detailed Parameters
- Description：SCR MODULE 5200V 4860A DO200AE
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：5.2 kV
- Current - On State (It (AV)) (Max)：4120 A
- Current - On State (It (RMS)) (Max)：4860 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：82000A @ 50Hz
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：TO-200AF
- Voltage - Gate Trigger (Vgt) (Max)：2.5 V
- Current - Gate Trigger (Igt) (Max)：350 mA
- Current - Hold (Ih) (Max)：350 mA
- Grade：-
- Qualification：-
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Overview
The T2851N52TOHXPSA1 is a high-power Silicon SCR module manufactured by Infineon Technologies, designed for electrical triggered phase control applications. It features a rated repetitive off-state voltage (VDRM) of 5.2 kV and a non-repetitive peak on-state current (ITSM) of 70 kA. The device operates within a junction temperature range of -40°C to +125°C and utilizes a press-fit installation style in the T-15035K package. Key electrical parameters include a maximum holding current of 350 mA, a gate trigger voltage of 2.5 V, and a gate trigger current of 350 mA. The module supports a continuous average on-state current rating of 4.33 A.
Feature Summary
- High voltage blocking capability suitable for demanding industrial power conversion environments
- Robust surge current handling capacity for fault protection scenarios
- Electrical triggering configuration for precise phase control management
Applications
- High voltage direct current transmission systems
- Industrial motor drive rectifiers
- Static var generators for power factor correction
Procurement Notes
Verify the complete part number including the XPSA1 suffix against official Infineon documentation to ensure correct packaging and compliance specifications. Confirm that the required clamping force falls within the specified mechanical limits for the T-15035K package during assembly. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards and material declarations.
Selection Notes
Select this component when a 5.2 kV blocking voltage and 70 kA surge capability are required for phase control thyristor modules. Ensure the thermal management design accommodates the specific thermal resistance characteristics of the silicon disc structure. Verify that the gate drive circuit can supply the necessary 350 mA trigger current at the specified 2.5 V threshold under all operating temperature conditions.
Part Context
This model belongs to Infineon's high-power thyristor disc series, specifically engineered for electrical triggering in phase control topologies. The T2851N52TOH designation indicates a 5.2 kV class device with specific surge ratings, while the XPSA1 suffix denotes the specific commercial packaging and traceability configuration provided by the manufacturer.
Replacement Considerations
The T2851N52TOH is listed as an alias or predecessor identifier for this part number. When evaluating substitutes, verify that alternative devices match the 5.2 kV VDRM, 70 kA ITSM, and T-15035K mechanical footprint requirements to maintain system compatibility.
