T2N7002BK,LM

Single FETs, MOSFETs Overview

The T2N7002BK,LM is a surface-mount N-channel MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOSVII-H technology. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 200 mA at Ta. The device operates with a maximum gate-source voltage (Vgs) of ±20 V and has an on-resistance (Rds(on)) of 3.9 Ω at Vgs=10V and Id=100mA. Key electrical parameters include a threshold voltage of 2.1 V max @ 250µA, gate charge of 0.35 nC @ 4.5 V, and input capacitance of 17 pF @ 10 V. Power dissipation is rated at 320 mW (Ta), with a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes U-MOSVII-H trench technology for enhanced performance
• Logic-level compatible operation for direct drive compatibility
• Low gate charge and input capacitance for fast switching speeds
• ESD protection capabilities integrated into the SOT-23-3 package

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'BK' against the manufacturer's official datasheet to confirm exact binning or testing criteria, as standard part numbers may vary by region. Confirm RoHS compliance status and halogen-free certification requirements prior to ordering. Ensure the SOT-23-3 package footprint matches the PCB design specifications exactly. Check for any specific storage or handling instructions related to moisture sensitivity levels defined in the component documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with 60V rating and low on-resistance is required for logic-level driven applications. The U-MOSVII-H technology offers superior switching characteristics compared to standard planar devices. Consider the 200mA continuous current limit and 320mW power dissipation constraints for thermal management. Verify that the 3.9Ω Rds(on) meets the efficiency requirements of the specific load circuit being designed.

Single FETs, MOSFETs Part Context

This component belongs to the 2N7002 family of N-channel enhancement mode MOSFETs, widely used in small-signal switching applications. Toshiba's implementation utilizes advanced trench gate technology to reduce on-resistance while maintaining a small form factor. The SOT-23-3 package allows for high-density mounting on printed circuit boards, making it suitable for portable electronics and space-constrained designs requiring reliable semiconductor switching solutions.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers include the 2N7002E-T1-E3 from Vishay and the 2N7002KT1G from onsemi. These alternatives share similar 60V ratings and SOT-23 packaging but may exhibit variations in on-resistance and current handling capabilities. Always cross-reference the specific electrical parameters and pin configurations before substituting to ensure circuit compatibility.