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T4M35T600B
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Product Detailed Parameters
- Description：THYRISTOR TO220AB TUBE 50PCS
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- Voltage - Off State：-
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The T4M35T600B is a silicon bidirectional thyristor (Triac) manufactured by Diodes Incorporated. It features a peak repetitive off-state voltage of 600V and an on-state RMS current rating of 4.0A at +100°C. The device supports a peak non-repetitive surge current of 40A and operates within a junction temperature range of -40 to +125°C. It exhibits high immunity to dv/dt, with a minimum critical rate of rise of commutation voltage of 500V/µs at +125°C. Packaged in a TO-220AB through-hole housing, it is designed for AC switching applications requiring snubberless operation.
Feature Summary
- Operates effectively in three quadrants (Q1, Q2, and Q3) for versatile gate triggering.
- Minimizes the need for external snubber networks due to high dv/dt immunity.
- Utilizes a molded plastic package with matte tin plated leads for solderability.
Applications
- General purpose mains power AC switching
- Universal motor speed control
- Electrovalve driving
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with environmental standards such as RoHS and Halogen-free requirements. Confirm that the TO-220AB tube packaging quantity matches the project needs before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a 600V blocking capability and 4A RMS current handling. Ensure the application environment allows for a junction temperature up to +125°C. Verify that the gate trigger current of 35mA is compatible with the driving logic level used in the system design.
Part Context
This Triac belongs to the T4 series of Snubberless devices from Diodes Incorporated. The series is engineered for high commutation performance and is suitable for AC inductive loads. The T4M35T600B specifically provides a 600V rating within this family, sharing common mechanical and electrical characteristics with other variants in the lineup.
Replacement Considerations
Direct substitutes include the T4M35T800B for higher voltage ratings or the T4M50T600B for increased current capacity. Cross-manufacturer equivalents should be evaluated based on matching IT(RMS), VDRM, and package dimensions.
FAQ
What is the maximum critical rate of rise of commutation voltage?
The minimum critical rate of rise of commutation voltage (dv/dt) is 500V/µs at a junction temperature of +125°C.
Is the device compliant with lead-free standards?
Yes, the T4M35T600B is lead-free finish and complies with EU Directive 2002/95/EC (RoHS).
What is the holding current specification?
The maximum holding current is 35 mA, measured with a 12V supply and an initiation current of ±200mA with the gate open.
