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The T835T-8G-TR is an 8 A Snubberless™ Triac in a D²PAK surface-mount package. It features an 800 V repetitive peak off-state voltage and supports a maximum junction temperature of 150 °C. The device offers high static dV/dt immunity and robust dynamic turn-off commutation, allowing operation without external snubber circuits under defined limits. Key electrical parameters include a gate trigger current (IGT) maximum of 35 mA, a holding current (IH) maximum of 40 mA, and a non-repetitive surge peak on-state current (ITSM) of 63 A for a full cycle at 25 °C initial junction temperature.
Verify the specific ordering code T835T-8G-TR against the manufacturer's latest datasheet revision DS12531 Rev 3. Confirm that the D²PAK package dimensions and pinout match the required PCB footprint. Ensure compliance with RoHS and halogen-free requirements if environmental standards are mandated for the final assembly process.
Select this component for applications requiring high commutation capability and noise immunity in general-purpose AC switching. The extended 150 °C junction temperature rating provides increased thermal margin compared to standard 125 °C devices. Verify that the circuit's dV/dt and di/dt stresses remain within the absolute maximum ratings to prevent device failure during turn-off.
This part belongs to the STMicroelectronics T-Series Snubberless Triacs, designed for medium-current AC switching. The 'T' suffix indicates increased dI/dt and dV/dt performance, while '8G' specifies the 8 A current rating and D²PAK package. The '-TR' suffix denotes tape and reel packaging for automated surface-mount assembly.
Direct replacements must maintain the 8 A RMS current, 800 V blocking voltage, and D²PAK package. Consider other T835 series variants like T835T-8G for tube packaging or T835H-8I for insulated through-hole packages if mechanical mounting differs. Verify equivalent thermal resistance and gate trigger characteristics before substitution.
Yes, it can be used without a snubber RC circuit provided the operating limits defined in the datasheet for dV/dt and di/dt are respected.
The maximum operating junction temperature (Tj) is 150 °C.
It supports three-quadrant triggering, allowing gate control in Quadrants I, II, and III.