TAN150

Overview

The TAN150 is an NPN RF bipolar junction transistor manufactured by Microsemi Corporation. It operates within a frequency range of 960MHz to 1.215GHz with a maximum collector current of 15A and a collector-emitter breakdown voltage of 55V. The device delivers a maximum power output of 583W and provides a gain of 7dB. It features a 55AT base-mount package and supports a maximum junction temperature of 200°C.

Feature Summary

• Designed for high-power RF applications in the VHF/UHF bands
• Utilizes a rugged base-mount construction for thermal management
• Capable of operation at elevated junction temperatures up to 200°C

Applications

• RF power amplification
• Broadcast transmitter stages
• Industrial heating systems

Procurement Notes

Verify component authenticity through authorized channels as the part status is obsolete. Confirm package integrity and pin configuration against the official datasheet before integration. Check for available replacement alternatives due to discontinuation status.

Selection Notes

Select this component for high-power RF designs requiring robust NPN performance in the specified frequency band. Ensure thermal design accommodates the 583W power dissipation and 200°C junction limit. Verify compatibility with the 55AT mounting style and drive requirements for 15A collector current.

Part Context

This device belongs to the family of RF power transistors intended for demanding communication and industrial environments. It represents a discrete semiconductor solution for linear and switching RF power stages where high reliability and power density are critical requirements.

Replacement Considerations

The part status is listed as obsolete. Consult manufacturer documentation for officially confirmed substitute part numbers or direct replacements suitable for the same electrical specifications and mechanical footprint.