TDA2616/N1,112

Overview

The TDA2616/N1,112 is a dual power amplifier designed for hi-fi audio applications. It delivers 2 x 12 W output into an 8 Ω load with ±16 V supply and THD of 0.5%. The device features internal voltage gain fixed at 30 dB, low offset voltage, and short-circuit protection. It operates within a supply voltage range of 7.5 to 21 V per rail. The component includes input mute functionality to suppress switch-on/off clicks and thermal protection circuits.

Feature Summary

• Requires very few external components
• No switch-on/switch-off clicks
• Input mute during switch-on and switch-off
• Low offset voltage between output and ground

Applications

• Stereo radio systems
• Stereo TV mains-fed applications
• Desktop hi-fi power amplifiers
• High-definition digital acoustics TV systems

Procurement Notes

Verify the specific package variant when ordering. The standard TDA2616 uses the SIL9 plastic power package (SOT131). Ensure compatibility with the intended mounting style and thermal requirements for the final enclosure design.

Selection Notes

Select this part for symmetrical or asymmetrical power supply designs requiring high fidelity audio amplification. Consider the fixed 30 dB internal gain which simplifies circuit design. Verify that the load impedance matches the 4 Ω or 8 Ω specifications for optimal power delivery and thermal performance.

Part Context

This component belongs to the Philips/NXP TDA series of audio power amplifiers. It is often paired with digital-to-analog converters like the TDA1521 in vintage and modern hi-fi builds. The TDA2616Q variant offers a bent-to-DIL package option for different PCB layouts.

Replacement Considerations

TDA2616Q

FAQ

How is the mute function activated?

The mute circuit activates automatically when the supply voltage drops below ±6 V. It can also be manually triggered by applying a current of 300 μA to pin 2.

What are the thermal protection limits?

The device includes two thermal protection circuits that activate at temperatures exceeding +150 °C to prevent damage to the crystal and power transistors.