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The TDTA114E is a silicon PNP epitaxial type digital transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors to simplify circuit design and reduce component count. The device operates with a supply voltage of -50 V and a collector current of -100 mA, dissipating up to 320 mW. Key electrical parameters include an input resistance (R1) of 10 kΩ, a DC current gain (GI) ranging from 30 to 100, and a transition frequency of 250 MHz. It is housed in a compact SOT-23 package suitable for surface mount applications.
Verify the specific ordering suffix and packaging configuration directly with Toshiba Electronic Devices & Storage Corporation or authorized distributors before procurement. Confirm that the requested revision matches the latest datasheet version Rev.3.0.A to ensure accurate electrical characteristics and pinout definitions are received.
Select this component when a PNP digital transistor with built-in biasing is required for switching or driver circuits. Ensure the operating conditions remain within the absolute maximum ratings, specifically the -50 V supply voltage and -100 mA output current limits. Consider the complementary TDTC114E if an NPN equivalent is needed for the same application.
The TDTA114E belongs to Toshiba's series of digital transistors with built-in resistors. Commercial production started in March 2016. It is designed as a standard discrete solution for replacing multiple discrete components with a single surface-mount device, facilitating easier layout and reduced bill of materials in consumer and industrial electronics.
No direct replacement part numbers are listed in the provided documentation. For similar functionality, consider other PNP digital transistors with comparable R1 values and SOT-23 packaging, ensuring voltage and current ratings meet or exceed the original specifications.