TDTA124E,LM

Overview

The TDTA124E is a silicon PNP epitaxial digital transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors within an SOT-23 package to simplify circuit design. Key electrical parameters include a supply voltage rating of -50 V and an output current capacity of -100 mA. The device features a typical DC current gain (GI) of 22 at an output current of -5 mA, with a minimum guaranteed gain of 56. Input resistance (R1) is typically 1.0 kΩ, and the resistance ratio (R2/R1) is 1. Transition frequency (fT) reaches 250 MHz under specified test conditions.

Feature Summary

• Integrated bias resistors reduce external component count, system size, and assembly time.
• Complementary configuration available with the TDTC124E NPN counterpart.

Applications

• Switching circuits
• Inverter circuits
• Driver circuits

Procurement Notes

Verify RoHS compliance status directly with Toshiba sales representatives, as the datasheet references environmental matters separately. Confirm that the specific order quantity meets distributor requirements. Ensure the SOT-23 package dimensions align with PCB footprint specifications before finalizing procurement orders for production integration.

Selection Notes

Select this component when a compact PNP digital transistor solution is required for switching or driver applications. The built-in resistor network eliminates the need for discrete base resistors, simplifying schematic design. Consider the complementary TDTC124E if an NPN equivalent is needed for push-pull or bridge configurations in the same system architecture.

Part Context

This part belongs to Toshiba's lineup of bipolar transistors utilizing silicon epitaxial technology. It is designed for general-purpose electronic applications where space savings and simplified assembly are priorities. The product was commercially introduced in March 2016 and serves as a standard solution for low-power digital logic interfacing tasks.

Replacement Considerations

The datasheet explicitly identifies the TDTC124E as the complementary NPN device. No other direct substitute part numbers are documented in the provided source material. Verify pinout compatibility and electrical ratings against existing designs before considering alternative manufacturers' equivalents.

FAQ

What is the internal structure of the TDTA124E?

It is a silicon PNP epitaxial type transistor with integrated bias resistors in an SOT-23 package.

What are the absolute maximum ratings for supply voltage and power dissipation?

The maximum supply voltage (VCC) is -50 V, and the maximum power dissipation (PD) is 320 mW.

How does the input resistance affect circuit design?

The typical input resistance (R1) is 1.0 kΩ, which allows for direct interfacing with logic outputs without requiring additional external base resistors.