TDTA143E,LM

Overview

The TDTA143E is a PNP epitaxial planar silicon digital transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors to simplify circuit design and reduce component count. The device operates with a supply voltage of -50 V and a continuous output current of -100 mA, dissipating up to 320 mW. Key electrical parameters include an input resistance (R1) of 4.7 kΩ, a resistance ratio (R2/R1) of 1.0, and a transition frequency (fT) of 250 MHz. It features a minimum DC current gain (GI) of 30 at -10 mA. The component is housed in a surface-mount SOT-23 package.

Feature Summary

• Integrated bias resistors eliminate the need for external input components, reducing system size and assembly time.
• Complementary NPN type available as TDTC143E for matched circuit designs.
• Thin-film resistor construction minimizes parasitic effects.

Applications

• Switching circuits
• Inverter circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against the official Toshiba datasheet to confirm pinout compatibility and packaging format. Ensure the procurement channel provides traceability documentation required for automotive or industrial applications. Confirm RoHS compliance status directly with the supplier before finalizing orders.

Selection Notes

Select this component when a compact PNP solution with built-in biasing is required for logic interface or switching tasks. Verify that the -50 V collector-emitter rating and -100 mA current capability meet the load requirements. Consider the complementary TDTC143E if an NPN counterpart is needed for push-pull configurations.

Part Context

This part belongs to the TDTA series of resistor-equipped transistors from Toshiba. It serves as a direct replacement for discrete BJT and resistor networks in space-constrained PCB layouts. The SOT-23 form factor allows for high-density mounting compared to through-hole alternatives.

Replacement Considerations

Check equivalent parts from other manufacturers such as ROHM (DTA143E) or ON Semiconductor for pin-compatible alternatives. Verify that substitute devices match the 4.7 kΩ input resistance and 1:1 bias ratio to maintain original circuit timing and logic levels.

FAQ

What is the internal configuration of the bias resistors?

The TDTA143E contains two integrated bias resistors with a typical value of 4.7 kΩ each, resulting in a resistance ratio (R2/R1) of 1.0.

Is there a complementary NPN version available?

Yes, the TDTC143E is the complementary NPN type offered by Toshiba for this series.

What is the maximum power dissipation?

The absolute maximum power dissipation (PD) is rated at 320 mW at an ambient temperature of 25°C.