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The TDTA143Z is a silicon PNP epitaxial type digital transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors within an SOT-23 surface-mount package to simplify circuit design. Key electrical parameters include a supply voltage rating of -50 V, a continuous output current of -100 mA, and a power dissipation capacity of 320 mW at 25°C ambient temperature. The device features a typical input resistance (R1) of 4.7 kΩ with a resistance ratio (R2/R1) of 10. DC current gain (GI) has a minimum value of 80, and the transition frequency (fT) reaches 250 MHz under specified test conditions.
Verify the specific ordering code suffix for packaging variations such as tape-and-reel quantities. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement orders. Ensure the selected variant matches the required automotive or industrial qualification standards if applicable to the target system environment.
Select this component when a compact PNP digital solution with integrated biasing is required for space-constrained designs. Verify that the -50 V collector-emitter voltage and -100 mA current ratings exceed the maximum operational loads in the target application. Consider the complementary TDTC143Z if an NPN equivalent is needed for push-pull or differential configurations.
This component belongs to the TDTA series of bipolar transistors featuring built-in bias resistors. It serves as the PNP counterpart to the TDTC143Z NPN digital transistor. The series is designed to replace discrete resistor-transistor combinations, offering a standardized footprint and simplified layout for general-purpose switching and amplification tasks.
Check pinout compatibility with existing layouts. Verify that substitute parts meet the -50 V voltage and -100 mA current requirements. Ensure the replacement maintains similar R1 values and hFE characteristics to preserve circuit timing and drive levels without redesign.