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The TDTA144E is a silicon PNP epitaxial type digital transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors to reduce external component count and system size. The device operates with a supply voltage of -50 V and an output current of -100 mA, dissipating up to 320 mW. Key electrical parameters include an input resistance (R1) ranging from 32.9 kΩ to 61.1 kΩ, a typical value of 47 kΩ, and a DC current gain (GI) minimum of 88. The transition frequency (fT) is typically 250 MHz at VCE = -10 V and IE = 5 mA.
Verify the specific ordering suffix for the LM variant against official Toshiba documentation to confirm package or marking details. Confirm RoHS compliance status directly with the manufacturer as environmental data requires specific product inquiry. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook regarding derating concepts under heavy loads.
Select this component for applications requiring a compact PNP digital transistor solution. The integrated resistors simplify inverter circuit design by eliminating external input resistors. Verify that the -50 V supply voltage and -100 mA output current ratings meet the specific circuit requirements before implementation.
The TDTA144E belongs to the family of bipolar transistors with built-in bias resistors. It serves as the PNP equivalent in a complementary pair with the TDTC144E. Commercial production began in March 2016. The device utilizes the SOT23 surface-mount package, designated internally as 2-3AB1A, weighing approximately 9 mg.
Publicly confirmed substitute part numbers are not provided in the source material. Consult the Toshiba website or sales representatives for alternative components with similar pinouts and electrical characteristics if replacement is necessary.
The device consists of a single PNP transistor with two integrated bias resistors connected to the base terminal.
The maximum junction temperature (Tj) is 150 °C, and the storage temperature range is -55 °C to 150 °C.
The integrated bias resistor reduces the number of external parts required, which allows for a reduction in overall system size and assembly time.