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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：79 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：320 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The TDTC114Y is a silicon NPN epitaxial type bipolar transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors to simplify circuit design and reduce component count. The device features a supply voltage rating of 50 V, an output current capacity of 100 mA, and a power dissipation limit of 320 mW. Electrical characteristics include a DC current gain (GI) minimum of 79 at 10 V collector-emitter voltage and 5 mA emitter current. The internal resistance ratio (R2/R1) is specified as 4.7, with transition frequency reaching 250 MHz. It is housed in an SOT-23 package.
Feature Summary
- Integrated bias resistor network reduces external part count and assembly time.
- Complementary configuration available with the TDTA114Y PNP model.
Applications
- Switching applications
- Inverter circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the official Toshiba datasheet to ensure correct packaging and marking configurations. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure the selected variant meets the required reliability standards for the intended operating environment.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required for switching or driver stages. Consider the 320 mW power dissipation and 50 V voltage ratings during thermal and electrical design. Verify that the 4.7 resistance ratio aligns with the target logic interface requirements.
Part Context
This component belongs to the TDTC series of pre-biased transistors from Toshiba Electronic Devices & Storage Corporation. These devices are designed to replace discrete resistor-transistor combinations, offering space savings on printed circuit boards. The product line supports various resistance values to accommodate different input impedance needs.
Replacement Considerations
The complementary PNP equivalent is the TDTA114Y. Cross-referencing with other manufacturers requires verifying matching electrical parameters such as hFE, R1, R2, and package dimensions.
