TDTC123J,LM

Overview

The TDTC123J is a silicon NPN epitaxial type digital transistor with built-in bias resistors, designed for switching and inverter applications. It operates within a supply voltage of 50 V and supports an output current of 100 mA. The device features an input resistance (R1) of 2.2 kΩ and a DC current gain (GI) minimum of 80. Packaged in the SOT-23 surface-mount format, it includes internal circuitry that eliminates the need for external base resistors. The component is rated for junction temperatures up to 150 °C and power dissipation of 320 mW.

Feature Summary

• Integrated bias resistor reduces external component count and assembly time
• Complementary configuration available with TDTA123J

Applications

• Switching circuits
• Inverter circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix required for tape-and-reel quantities against Toshiba's official catalog. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure the selected package variant matches the PCB footprint requirements for the SOT-23 form factor.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for low-power switching tasks. Verify that the 2.2 kΩ input resistance aligns with the driving source impedance. Consider the complementary P-channel equivalent if both logic states are needed in the design.

Part Context

This part belongs to Toshiba's series of resistor-equipped transistors, which integrate bias networks to simplify circuit design. The TDTC123J specifically serves as the NPN counterpart to the TDTA123J, allowing for balanced complementary designs in driver and inverter topologies without requiring discrete base resistors.

Replacement Considerations

The TDTA123J serves as the complementary PNP equivalent. For direct substitution, verify pin compatibility and electrical ratings against the original design requirements.