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The TDTC143E is a silicon NPN epitaxial type digital transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates bias resistors to reduce external component count and system size. The device operates with a supply voltage of 50 V and a continuous output current of 100 mA, dissipating up to 320 mW. Key electrical parameters include an input resistance (R1) of 4.7 kΩ, a resistance ratio (R2/R1) of 1.0, and a DC current gain (GI) minimum of 30. The transition frequency reaches 250 MHz. It is packaged in the SOT-23 format.
Verify the specific ordering suffix against the official Toshiba datasheet to confirm package type and tape/reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure the design accounts for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain product reliability under heavy loads.
Select this component when a compact NPN digital transistor with integrated biasing is required for switching or driver applications. The 4.7 kΩ input resistance and unity resistance ratio suit standard logic interface circuits. Verify that the 50 V supply voltage and 100 mA output current ratings align with the target application's electrical requirements.
The TDTC143E belongs to the TDTC series of bipolar transistors from Toshiba Electronic Devices & Storage Corporation. Commercial production began in March 2016. It serves as the NPN equivalent in a complementary pair with the TDTA143E, providing designers with matched performance characteristics for push-pull or differential configurations.
No direct replacement part numbers are documented in the provided source material. Designers should consult the official Toshiba website or contact sales representatives for updated alternative components or cross-reference information.