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The TF218THC-5-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a bulk package configuration. The device supports surface mount installation and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a gate-source breakdown voltage of -20 V, a gate-source cutoff voltage of -1 V, and a drain-source current at Vgs=0 of 240 uA. This component belongs to the TF218THC series.
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS and REACH-SVHC compliance status prior to integration. Check current lifecycle status as availability may vary. Ensure storage conditions maintain device integrity before assembly. Validate pinout compatibility with target PCB footprint design.
Select this component for applications requiring low noise performance and high input impedance characteristics typical of JFETs. Consider the specific gate-source cutoff voltage requirements for biasing stability. Evaluate thermal management needs given the wide operating temperature range. Compare against alternative JFETs if specific current levels differ from the 240 uA specification.
This part belongs to the TF218THC series of N-channel JFETs from onsemi. These devices are designed for specialized analog applications where low noise and high impedance are critical. The series represents onsemi's discrete semiconductor offerings in the transistor category, specifically targeting audio and precision measurement electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other N-channel JFETs based on specific circuit requirements.
The maximum gate-source breakdown voltage is -20 V.
The drain-source current at Vgs=0 is 240 uA.