TF218THC-5-TL-H

TF218THC-5-TL-H

$0.04
  • Description:JFET N-CH
  • Series:*

SKU:5d02f5df180c Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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TF218THC-5-TL-H

Overview

The TF218THC-5-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a bulk package configuration. The device supports surface mount installation and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a gate-source breakdown voltage of -20 V, a gate-source cutoff voltage of -1 V, and a drain-source current at Vgs=0 of 240 uA. This component belongs to the TF218THC series.

Feature Summary

  • N-channel JFET configuration for signal amplification
  • Silicon-based construction for reliable operation
  • Wide operating temperature range capability

Applications

  • Electrical condenser microphone pre-amplifiers
  • Low-noise analog signal processing circuits
  • High-impedance input stages

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS and REACH-SVHC compliance status prior to integration. Check current lifecycle status as availability may vary. Ensure storage conditions maintain device integrity before assembly. Validate pinout compatibility with target PCB footprint design.

Selection Notes

Select this component for applications requiring low noise performance and high input impedance characteristics typical of JFETs. Consider the specific gate-source cutoff voltage requirements for biasing stability. Evaluate thermal management needs given the wide operating temperature range. Compare against alternative JFETs if specific current levels differ from the 240 uA specification.

Part Context

This part belongs to the TF218THC series of N-channel JFETs from onsemi. These devices are designed for specialized analog applications where low noise and high impedance are critical. The series represents onsemi's discrete semiconductor offerings in the transistor category, specifically targeting audio and precision measurement electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other N-channel JFETs based on specific circuit requirements.

FAQ

What is the maximum gate-source breakdown voltage?

The maximum gate-source breakdown voltage is -20 V.

What is the drain-source current when Vgs is zero?

The drain-source current at Vgs=0 is 240 uA.

TF218THC-5-TL-HTF218THC-5-TL-H
$0.04
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