SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The TF252-4-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain current of 1 mA and a power dissipation rating of 100 mW. The device utilizes a 3-VTFP surface-mount package with a maximum junction temperature of 150°C. Key electrical characteristics include a gate-source cutoff voltage of 200 mV at 1 µA drain current and a maximum input capacitance of 3.5 pF at 5 V drain-source voltage. The component operates within a temperature range of -55°C to +150°C.
Verify the exact part number TF252-4-TL-H against official manufacturer databases, as public distributor records primarily list similar variants like TF202THC-4-TL-H or TF256TH-4-TL-H. Confirm availability status, as related components in this series are marked as obsolete. Ensure compliance with RoHS and REACH requirements before integration into final assemblies.
Select this component for designs requiring low noise and high input impedance. Compare Idss specifications across the TF2xx series to match specific biasing needs. Verify that the 3-VTFP footprint aligns with PCB layout constraints. Consider thermal management capabilities given the 100 mW power dissipation limit in enclosed environments.
This component belongs to the TF2xx series of N-channel JFETs from onsemi. These devices are typically used in analog front-end applications where low noise and high impedance are critical. The series shares common packaging and basic electrical structures but varies in specific parameters like Idss and Vgs(off).
Public documentation confirms TF202THC-4-TL-H and TF256TH-4-TL-H as related parts in the same family. Verify pinout compatibility and parameter overlap before substitution. No other direct substitutes are confirmed in available public sources.