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The TF252TH-4-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain current of 1 mA and a power dissipation rating of 100 mW. The device utilizes a 3-VTFP surface-mount package with a maximum junction temperature of 150°C. Key electrical characteristics include a gate-source cutoff voltage of 200 mV at 1 µA, a gate-source breakdown voltage of -20 V, and a maximum input capacitance of 3.5 pF at 5 V.
Verify component authenticity through authorized channels as the part status is discontinued. Confirm package integrity and pin alignment against the 3-VTFP specification before integration. Review datasheet revisions for any parameter updates or manufacturing changes that may affect circuit performance.
Select this component for designs requiring low noise and high input impedance in compact form factors. Ensure the circuit operates within the specified 150°C junction temperature limit. Verify that the required drain current and cutoff voltage parameters align with the specific application requirements.
This component belongs to the TF202THC series of N-channel JFETs from onsemi. It shares similar packaging and functional characteristics with other parts in the family, such as the TF202THC-4-TL-H and TF256TH-4-TL-H, designed primarily for audio and sensor interface applications.
Public confirmed substitute part numbers are not available in the provided documentation.