SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The TF256TH-4-TL-H is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in a surface-mount 3-VTFP package. Key electrical specifications include a maximum drain current of 1 mA, a power dissipation rating of 100 mW, and a gate-source cutoff voltage of 100 mV at 1 µA. The device operates within a temperature range of -55°C to +150°C junction temperature.
This component is officially listed as obsolete or discontinued by the manufacturer. Verification of availability requires checking authorized distributors for surplus stock or alternative sourcing channels. Compliance with RoHS and REACH standards should be confirmed via official documentation before integration into new designs.
Engineers selecting this part should prioritize its low input capacitance and specific cutoff voltage characteristics. The 3-VTFP package limits thermal management options compared to larger packages. Designers must ensure the operating conditions remain within the specified 100 mW power dissipation limit and temperature range.
The TF256TH-4-TL-H belongs to the TF256 series of small-signal JFETs from onsemi. These devices are typically used in analog front-end circuits where high input impedance and low noise are critical requirements. The product line supports various audio and sensor interface applications.