TGA2214

RF Amplifiers Overview

The TGA2214 is a wideband power amplifier fabricated on Qorvo's TQGaN15 GaN-on-SiC process. It operates from 2 to 18 GHz, delivering 5 W of saturated output power with greater than 20% power-added efficiency and 14 dB large signal gain. The device utilizes a screw-mount installation style and functions within a temperature range of -40°C to +85°C.

RF Amplifiers Feature Summary

• Fabricated on TQGaN15 GaN-on-SiC process for high reliability
• Wideband operation covering 2 to 18 GHz frequency range
• High saturated output power capability of 5 Watts

RF Amplifiers Applications

• Radar systems
• Electronic warfare applications
• Communications infrastructure

RF Amplifiers Procurement Notes

Verify the specific suffix (e.g., CP) against official datasheets to confirm package type and pinout compatibility. Ensure supply chain sources provide authentic components with traceable documentation. Confirm that the operating voltage and current specifications align with system design requirements before integration.

RF Amplifiers Selection Notes

Select this component for designs requiring broad bandwidth and high power density in the 2-18 GHz spectrum. Consider thermal management capabilities due to the power dissipation characteristics. Evaluate the screw-mount form factor against available board space and mechanical constraints.

RF Amplifiers Part Context

This part belongs to Qorvo's portfolio of GaN-based RF amplifiers. It represents a transition from bare die to packaged solutions in certain series variants, maintaining performance metrics while improving ease of integration into larger subsystems.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material.