TGA2830-SM

RF Amplifiers Overview

The TGA2830-SM is a packaged MMIC power amplifier operating from 2.7 to 3.5 GHz, utilizing Qorvo's 0.25-um GaN on SiC technology. It typically delivers over 42.5 dBm of saturated output power with 54% power-added efficiency and 30.5 dB small signal gain. The device supports operation under high voltage conditions and is designed for robust performance in demanding RF environments.

RF Amplifiers Feature Summary

• High power density using 0.25-um GaN on SiC process
• Packaged MMIC design for simplified integration
• High power-added efficiency at saturation

RF Amplifiers Applications

• Base station transmit modules
• Point-to-point microwave radio systems
• Electronic warfare applications

RF Amplifiers Procurement Notes

Verify the specific datasheet revision (e.g., Rev. B) as specifications may change without notice. Confirm package compatibility and thermal requirements for your PCB layout. Ensure supply chain sources are authorized distributors to guarantee component authenticity and traceability.

RF Amplifiers Selection Notes

Select this component when high output power and efficiency are critical within the 2.7–3.5 GHz band. Consider the packaged MMIC form factor for ease of assembly compared to bare die alternatives. Evaluate thermal management needs due to high power dissipation characteristics.

RF Amplifiers Part Context

Part of Qorvo's TGA series of GaN power amplifiers. Designed for high-performance RF applications requiring significant output power in a compact footprint. Utilizes advanced semiconductor materials for superior linearity and efficiency compared to traditional technologies.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers only; omit otherwise.