SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Bourns TIC253N-S is a silicon triac from the TIC253 series, housed in an SOT-93 package. It features a glass-passivated wafer and supports a repetitive peak off-state voltage (VDRM) of 800 V. The device handles a full-cycle RMS on-state current (IT(RMS)) of 20 A at case temperatures up to 70°C, with a peak on-state surge current (ITSM) of 150 A. Maximum gate trigger current (IGT) is specified at 50 mA for quadrants 1 through 3. Electrical characteristics include an on-state voltage (VT) of typically 1.7 V at ±28.2 A, and critical rates of rise for off-state voltage (dv/dt) and on-state current (di/dt) are ±450 V/µs and ±100 A/µs, respectively.
Verify component authenticity through authorized distribution channels due to obsolete status. Confirm datasheet revision date and specific ordering suffixes match design requirements. Check for RoHS compliance documentation if required by target assembly standards. Validate thermal management solutions against junction-to-case resistance specifications during integration planning.
Select this component when high off-state voltage blocking and substantial RMS current carrying capacity are required in a compact surface-mount form factor. Ensure gate drive circuitry can supply sufficient trigger current within the specified quadrant limits. Evaluate thermal dissipation paths carefully, as derating is necessary above 70°C case temperature to maintain safe operating junction conditions.
The TIC253N-S belongs to the TIC253 series of high-current silicon triacs manufactured by Bourns. This series is characterized by its robust construction and suitability for demanding power switching applications. The 'N' suffix denotes the 800 V voltage variant within the family, which also includes lower voltage ratings such as 400 V, 600 V, and 700 V options.
Publicly confirmed substitute part numbers are not available in the provided source material.