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The Bourns TIC263D-S is a silicon triac rated for 400 V repetitive peak off-state voltage and 25 A RMS on-state current. It features a glass-passivated wafer and operates within a case temperature range of -40°C to +110°C. The device supports a peak surge current of 175 A and has a maximum gate trigger current of 50 mA across quadrants 1-3. Packaged in an SOT-93 (TO-220AB) configuration, it offers a junction-to-case thermal resistance of 1.52 °C/W. Key electrical characteristics include a typical on-state voltage of 1.7 V at 35.2 A and a critical rate of rise of off-state voltage of ±450 V/µs.
Verify the specific suffix 'S' corresponds to the 700 V rating if sourcing from alternate distributors, as datasheet listings may vary. Confirm package type matches SOT-93/TO-220AB requirements. Check for obsolete status indicators in current supply channels. Ensure storage conditions remain within -40°C to +125°C to maintain device integrity prior to assembly.
Select this component when a 400 V blocking voltage is sufficient for the application circuit. Consider the 25 A RMS continuous current limit and derating requirements above 60°C case temperature. Evaluate the SOT-93 package size against available PCB real estate. Verify that the gate trigger current specifications align with the driving circuit capabilities.
The TIC263 series comprises high-current silicon triacs designed for robust power switching applications. This family includes variants with different off-state voltage ratings, such as 400 V, 600 V, 700 V, and 800 V options. The TIC263D-S specifically denotes the 400 V variant within this standardized product line, sharing common thermal and mechanical characteristics with its higher-voltage counterparts.
Direct substitutes must match the 400 V VDRM, 25 A IT(RMS), and SOT-93 package. Verify equivalent thermal resistance and gate trigger characteristics. Cross-reference with other manufacturers offering TO-220AB triacs with similar current and voltage ratings.