TIP31C

Single Bipolar Transistors Overview

The TIP31C is an NPN silicon power transistor utilizing base island technology, housed in a TO-220AB plastic package. It features a collector current rating of 5A and a collector-emitter breakdown voltage of 100V. The device is designed for high-performance applications, offering improved characteristics over standard industry equivalents.

Single Bipolar Transistors Feature Summary

• Base island technology construction for enhanced performance
• NPN silicon power transistor configuration
• TO-220AB plastic package housing

Single Bipolar Transistors Applications

• Audio amplification circuits
• Power linear regulation applications
• Switching mode power supply designs

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation on the component marking or datasheet header. Renesas Electronics Corporation produces this part using specific base island technology. Confirm the package type is TO-220AB and the polarity is NPN to ensure compatibility with the intended circuit design requirements.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN power transistor is required for audio or switching applications. The base island technology provides superior performance compared to standard industry alternatives. Ensure the thermal management solution supports the 5A continuous collector current capability within the operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the TIP31 series of power transistors. The complementary PNP version is designated as TIP32C. Both devices are engineered for general-purpose power switching and linear regulation tasks, leveraging advanced manufacturing techniques for reliability.