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Product Detailed Parameters
- Description：JFET N-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：8 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 4 nA
- Input Capacitance (Ciss) (Max) @ Vds：18pF @ 10V (VGS)
- Resistance - RDS(On)：60 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The TIS75 is an N-channel general-purpose JFET in a TO-92 package. It features a drain-gate voltage of 30 V and gate-source voltage of -30 V. The zero-gate voltage drain current ranges from 8 to 80 mA, with a maximum gate-source cutoff voltage of -4.0 V. Input capacitance is 18 pF at 1.0 MHz. Total device dissipation is 350 mW, with thermal resistance junction-to-ambient at 357 °C/W. Operating temperature spans -55°C to +150°C.
Feature Summary
- Designed for low-level analog switching applications
- Suitable for sample and hold circuits
- Compatible with chopper stabilized amplifier designs
Applications
- Low level analog switching
- Sample and hold circuits
- Chopper stabilized amplifiers
Procurement Notes
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific datasheet revision matches the required design specifications. Ensure the TO-92 package dimensions align with the target PCB footprint. Check for RoHS compliance status if environmental regulations apply to the final assembly.
Selection Notes
Select this component for low-power analog signal routing where minimal leakage is critical. The TO-92 package limits power dissipation to 350 mW, requiring careful thermal management. Verify that the -4.0 V maximum cutoff voltage fits the control logic levels. Consider input capacitance values when designing high-frequency signal paths.
Part Context
The TIS75 is an N-channel Junction Field Effect Transistor (JFET) manufactured originally by Fairchild Semiconductor. It belongs to the family of small-signal silicon devices intended for general-purpose amplification and switching tasks. The component utilizes a standard three-terminal configuration within a plastic encapsulated outline.
Replacement Considerations
TIS75J18Z
FAQ
What is the maximum gate-source cutoff voltage?
The maximum gate-source cutoff voltage (VGS(off)) is -4.0 V under test conditions of VDS = 20V and ID = 4.0nA.
What is the typical rise time for this device?
The typical rise time (tr) is 10 ns, measured with VGS(off) = -4.0V, VGS(on) = 0, ID = 5.0mA, and VDS = 10V.
What is the thermal resistance junction-to-ambient?
The thermal resistance from junction to ambient (RθJA) is specified as 357 °C/W.
