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TJ60S04M3L,LXHQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 40V 60A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TJ60S04M3L,LXHQ
- Description：MOSFET P-CH 40V 60A DPAK
- Series：U-MOSVI
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
- Vgs (Max)：+10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds：6510 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：175°C
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK+
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for TJ60S04M3L,LXHQ
Single FETs, MOSFETs Overview
The TJ60S04M3L,LXHQ is a P-Channel Power MOSFET manufactured by Toshiba Semiconductor and Storage, designed for automotive applications under the AEC-Q101 qualification standard. It utilizes Silicon technology in a DPAK-3 (TO-252-3) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 40 V and a continuous drain current of 80 A at ambient temperature. The device features a maximum on-resistance of 5.2 mOhms and a gate threshold voltage of 3 V. With a power dissipation rating of 100 W and a maximum operating junction temperature of +175 C, it supports high-efficiency switching. The component belongs to the UMOS VI series, offering enhanced performance for robust circuit designs.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- High thermal stability with a maximum junction temperature of 175°C
- Low on-resistance for improved power efficiency
- UMOS VI technology for optimized switching characteristics
Single FETs, MOSFETs Applications
- Automotive power management circuits
- DC motor control systems
- Power distribution units in vehicles
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix LXHQ against official Toshiba documentation to confirm exact packaging and tape specifications. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the datasheet for thermal derating curves relevant to your PCB layout. Confirm RoHS compliance status through the manufacturer's latest certification documents before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel MOSFET with 40V rating and high current capacity is required for automotive environments. Consider the DPAK-3 package for its balance of thermal performance and board space. Evaluate the 5.2 mOhm on-resistance against system power loss constraints. Ensure gate drive voltages align with the specified threshold and maximum ratings for reliable operation.
Single FETs, MOSFETs Part Context
This part belongs to Toshiba's automotive MOSFET portfolio, specifically utilizing UMOS VI technology. It is designed to meet the stringent reliability demands of modern vehicle electronics. The DPAK-3 package provides efficient heat dissipation for high-current applications. As an AEC-Q101 qualified device, it ensures consistency and durability in harsh automotive operating conditions.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the TJ60S04 series or other Toshiba P-Channel MOSFETs with matching 40V/80A ratings. Verify pin compatibility and thermal resistance values for equivalent packages. Ensure any replacement also holds AEC-Q101 certification if used in automotive contexts.
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