TK055U60Z1,RQ

Single FETs, MOSFETs Overview

The TK055U60Z1,RQ is a 600V N-channel power MOSFET from Toshiba's DTMOSVI series, utilizing a super junction structure. It features a TOLL package with Kelvin source connection for enhanced high-speed switching performance and oscillation suppression. Key electrical parameters include a maximum drain-source voltage (VDSS) of 600V, a continuous drain current (ID) of 40A, and a typical on-resistance (RDS(ON)) of 55mΩ at VGS=10V. The device exhibits a typical total gate charge (Qg) of 65nC and a typical gate-drain charge (Qgd) of 15nC. It operates within a channel temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• Super junction structure reduces specific on-resistance by approximately 13% compared to the previous DTMOSIV-H generation.
• TOLL package enables Kelvin connection of the gate drive signal source terminal.
• Optimized gate design lowers the figure of merit (RDS(ON) x Qgd) by approximately 52% versus prior generations.
• Reduced inductance effects in the source line enhance switching speed and suppress oscillations.

Single FETs, MOSFETs Applications

• Server power supplies for data centers
• Power factor correction circuits in photovoltaic generators
• Uninterruptible power supply systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number includes the suffix ,RQ to confirm reel packaging configuration. Confirm the component belongs to the DTMOSVI series rather than older DTMOSIV variants. Ensure the application circuit accommodates the low gate charge characteristics for optimal driver compatibility. Validate that the thermal management design supports the specified 150°C channel temperature limit under expected load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-efficiency power conversion stages requiring low conduction and switching losses. The TOLL package is suitable for applications demanding improved thermal performance and reduced parasitic inductance. Compare the 55mΩ RDS(ON) against system requirements to ensure adequate current handling capabilities. Consider the 65nC gate charge for gate driver selection to balance switching speed and electromagnetic interference.

Single FETs, MOSFETs Part Context

This device is part of Toshiba's expanded 600V DTMOSVI product lineup, representing the first 600V offering in this specific advanced series. It succeeds earlier technologies like DTMOSIV-H, focusing on reducing power loss in switching regulators. The TOLL package distinguishes it from traditional surface-mount packages by integrating a Kelvin source pin for precise gate control.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same family include other DTMOSVI 600V devices such as the TK110U65Z,RQ, though current ratings and on-resistance values will differ. Cross-generation substitutes like the DTMOSIV-H series may fit mechanically but will exhibit higher RDS(ON) and Qgd values, potentially affecting efficiency.