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TK10P50W,RQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is PB-F POWER MOSFET TRANSISTOR DPA. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TK10P50W,RQ
- Description：PB-F POWER MOSFET TRANSISTOR DPA
- Series：DTMOSIV
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：430mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 300 V
- FET Feature：-
- Power Dissipation (Max)：80W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for TK10P50W,RQ
Single FETs, MOSFETs Overview
The TK10P50W,RQ is a P-channel Power MOSFET manufactured by Toshiba Semiconductor and Storage. It features a low on-resistance of 0.28 ohms at VGS = -10V, enabling efficient power switching with minimal conduction losses. The device supports a drain-source voltage of -500V and a continuous drain current of -10A. Designed for robust performance, it includes enhanced avalanche energy capability and fast switching characteristics suitable for high-frequency applications.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for reduced conduction losses
- High breakdown voltage for reliable operation in high-voltage circuits
- Fast switching speed for improved efficiency in high-frequency applications
Single FETs, MOSFETs Applications
- Motor drivers
- Power supplies
- Inverters
Single FETs, MOSFETs Procurement Notes
Verify the exact part number TK10P50W,RQ with authorized distributors to ensure authenticity. Confirm package type and tape/reel specifications match your assembly requirements. Check for any recent updates or revisions in the official datasheet before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Consider the thermal resistance and power dissipation capabilities when selecting this component for your design. Ensure that the operating conditions stay within the specified limits for voltage, current, and temperature to maintain reliability and performance over time.
Single FETs, MOSFETs Part Context
This P-channel MOSFET belongs to Toshiba's lineup of high-voltage power devices designed for industrial and consumer electronics. It complements other similar components offering comparable voltage ratings and current handling capabilities, providing designers with flexible options for various power management solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides from Toshiba Semiconductor and Storage for verified alternatives. Ensure any replacement matches key electrical parameters such as voltage rating, current capacity, and package dimensions to maintain system compatibility and performance.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
