TK6A60W,S4VX

Single FETs, MOSFETs Overview

The TK6A60W,S4VX is an N-channel Power MOSFET from Toshiba Semiconductor and Storage, belonging to the DTMOSIV series. It features a 600 V drain-source voltage rating and a continuous drain current of 6 A at 25°C ambient temperature. The device utilizes a TO-220 package with a maximum power dissipation of 40 W at case temperature. Key electrical characteristics include a gate-source threshold voltage of 3.7 V maximum at 1.5 mA drain current, a gate charge of 86 nC maximum at 10 V, and an input capacitance of 800 pF maximum at 300 V. The component supports a junction temperature up to 150°C and operates in enhancement mode.

Single FETs, MOSFETs Feature Summary

• DTMOSIV superjunction technology for optimized switching performance
• High breakdown voltage capability suitable for high-voltage applications
• Integrated body diode for inductive load handling

Single FETs, MOSFETs Applications

• Switching voltage regulators
• Motor drive circuits
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S4VX against the manufacturer's official datasheet to confirm pinout configuration and packaging details. Ensure compatibility with thermal management requirements given the 40 W dissipation limit. Confirm RoHS compliance status as per the latest regulatory documentation before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage switching with moderate current levels. The TO-220 package facilitates through-hole mounting and heatsink attachment. Consider the 6 A continuous current rating relative to thermal constraints and duty cycle requirements in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's TK series of N-channel MOSFETs, specifically utilizing DTMOSIV technology. The series is designed for general-purpose power switching applications. The TK6A60W variant offers a balance of voltage rating and current capacity within the TO-220 form factor, serving as a standard solution for medium-power electronics.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Toshiba replacement guides or equivalent specifications from other manufacturers.