TK8A60W,S4VX

Single FETs, MOSFETs Overview

The TK8A60W,S4VX is an N-channel power MOSFET from Toshiba's DTMOS IV series, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 8 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 0.42 Ω when driven by a gate-source voltage (Vgs) of 10 V. Key electrical parameters include a gate charge (Qg) of 37 nC at 10 V and an input capacitance (Ciss) of 1100 pF at 300 V. The component is housed in a TO-220SIS through-hole package with a maximum power dissipation of 30 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes DTMOS IV superjunction technology to achieve low on-resistance and fast switching performance.
• Designed for robust operation with a maximum junction temperature rating of 150°C.
• Features a single N-channel configuration suitable for general-purpose power switching.

Single FETs, MOSFETs Applications

• Switching voltage regulators
• DC-DC converters
• Motor drive circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S4VX against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the ordering documentation explicitly references the complete part number to avoid confusion with similar variants in the TK8A60 family. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600 V blocking capability with moderate current handling up to 8 A. Consider the 0.42 Ω Rds(on) value for conduction loss calculations in low-frequency switching environments. Evaluate the TO-220SIS package constraints for thermal management solutions, as the 30 W dissipation rating depends heavily on heatsink design and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's DTMOS IV series of superjunction MOSFETs, which are engineered for improved efficiency compared to conventional planar structures. The series targets server solutions and industrial power supplies. The TK8A60W variant specifically addresses mid-power requirements within the 600 V class, offering a balance between voltage stress tolerance and current carrying capacity for compact power designs.

Single FETs, MOSFETs Replacement Considerations

Potential substitutes include other 600 V N-channel MOSFETs in TO-220 packages with comparable Rds(on) and Qg values. Verify pinout alignment and thermal resistance specifications before substitution. Check for equivalent switching speed characteristics to ensure circuit stability without modification.