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The TLP121(V4-GB-TPL,F) is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a gallium arsenide infrared emitting diode with a phototransistor in a small outline plastic DIP-4 package. Key electrical parameters include a minimum collector-emitter breakdown voltage of 80 V, a nominal current transfer ratio of 100% for the GB rank, and a maximum dark power of 100 nA. The device supports an insulation voltage of 3750 Vrms and operates within a temperature range of -25 °C to +85 °C.
Verify the specific suffix configuration against official Toshiba documentation to ensure correct binning and packaging. Confirm RoHS status and lead time requirements directly with authorized distributors or the manufacturer prior to ordering. Ensure the selected variant matches the required current transfer ratio rank and thermal specifications for the target application environment.
Select this component when a standard transistor output optocoupler with moderate speed and high isolation is required. The GB rank ensures a higher minimum current transfer ratio compared to standard ranks, providing better gain consistency. Consider the DIP-4 package constraints and operating temperature limits during PCB layout and thermal design phases.
This part belongs to the TLP121 series of mini flat couplers designed for surface mount assembly. The series offers various output types and packages to suit different isolation and space requirements. The TLP121 specifically targets general-purpose isolation applications where cost-effectiveness and reliability are prioritized over high-speed data transmission capabilities.
Public confirmed substitute part numbers are not available in the provided source material.