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The TLP191B(TPL,U,C,F) is a mini flat surface-mount photocoupler manufactured by Toshiba Semiconductor and Storage. It integrates a Gallium Arsenide infrared emitting diode optically coupled to a series-connected photodiode array with an integrated shunt resistor, designed specifically for MOSFET gate drive applications. The device provides electrical isolation with a minimum isolation voltage of 2500 Vrms. Key electrical characteristics include a minimum open voltage of 7.0V and a minimum short-circuit current of 24.0 μA. The component is housed in a compact SMD package suitable for automated assembly processes.
Verify the specific suffix codes (TPL, U, C, F) against official Toshiba documentation to confirm packaging type, lead-free status, and certification requirements. Ensure the selected variant matches the required reel quantity and RoHS compliance standards for the intended manufacturing process.
Select this component when a dedicated gate drive signal isolator is required for MOSFETs. The internal shunt resistor simplifies circuit design by managing leakage currents. Verify that the 7.0V open voltage meets the gate threshold requirements of the target MOSFET under the specific operating conditions.
This part belongs to the TLP191 series of mini flat photocouplers from Toshiba. These devices are engineered for space-constrained applications requiring reliable isolation. The series typically includes variants with different packaging or certification suffixes to meet diverse regional and manufacturing standards.
Publicly confirmed substitute part numbers for TLP191B(TPL,U,C,F) were not found in the provided source material.