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TLP521X is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Isocom Components 2004 LTD. Its product description is OPTOISOLTR 5.3KV 1CH TRANS 4-DIP. Review the specifications below when checking this part for your BOM.
The TLP521X is a high-density mounting phototransistor optically coupled isolator manufactured by Isocom Components. It integrates an infrared light emitting diode and an NPN silicon photo transistor within a space-efficient dual in line plastic package. The device provides electrical isolation between systems with different potentials and impedances. Key specifications include a maximum forward voltage of 1.3V, a typical rise time of 4μs, and a typical fall time of 3μs. It supports a maximum input current of 50mA and offers a minimum isolation voltage of 5300Vrms. The unit operates within a temperature range of -30°C to 100°C.
Verify the specific suffix designation against official documentation to confirm pin configuration and package variant. Ensure compatibility with required isolation voltage standards for the target application. Confirm operating temperature range requirements align with the specified limits. Check for any custom electrical selection options if standard parameters do not meet circuit needs.
Select this component when high-density mounting is required alongside reliable galvanic isolation. Consider the phototransistor output type for digital switching applications. Evaluate the current transfer ratio requirements against the load conditions. Ensure the DIP package dimensions fit the available PCB real estate constraints.
The TLP521 series represents a family of optically coupled isolators from Isocom Components. This series includes variants such as single-channel, dual-channel, and quad-channel configurations. The components are designed to replace older industry-standard types while offering customizable electrical parameters. They are widely used in industrial automation and power supply protection circuits.
TLP521-2
The device consists of an infrared light emitting diode and an NPN silicon photo transistor.
The minimum isolation voltage is 5300Vrms.
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