SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The TLP5774H(TP,E is a single-channel optically isolated gate driver manufactured by Toshiba Semiconductor and Storage. It integrates a GaAlAs infrared LED with a high-speed photodetector IC in a compact SO-6L package. The device provides 5000 Vrms insulation voltage and supports a maximum forward current of 8 mA with a forward voltage of 1.65 V. It features a peak output current capability of 4 A, ensuring robust drive performance for power switches. Electrical characteristics include a maximum propagation delay of 150 ns, a rise time of 56 ns, and a fall time of 25 ns. The component operates within a temperature range of -40°C to +125°C and has a power dissipation rating of 20 mW.
Verify the specific suffix (TP,E) against official Toshiba documentation to confirm pin configuration and packaging details. Ensure compatibility with system isolation requirements and thermal management constraints before procurement. Cross-reference ordering information with authorized distributors to avoid counterfeit components.
Select this component when high-speed switching and robust galvanic isolation are required for gate drive applications. Consider the 4A output current capability and low propagation delay for efficiency. Evaluate thermal performance within the specified operating temperature range to ensure reliability in high-power scenarios.
This part belongs to the TLP577xH series of photocouplers designed for IGBT and MOSFET gate driving. The series utilizes GaAlAs infrared LEDs and integrated photo ICs to achieve high speed and high isolation voltage in a small form factor. These devices are engineered for use in various power conversion and motor control applications requiring reliable signal transmission across isolation barriers.
Consult official Toshiba substitution guides for verified alternatives. Generic replacements may not match the specific electrical characteristics or isolation ratings required for safe operation in high-voltage gate drive circuits.