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TM3E0039120A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Coherent Corp. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TM3E0039120A
- Description：SIC MOSFET
- Series：-
- Mfr：Coherent Corp
- Package：Tray
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：60A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Single FETs, MOSFETs datasheet and documents for TM3E0039120A
Single FETs, MOSFETs Overview
The TM3E0039120A is an N-Channel Silicon Carbide (SiC) MOSFET manufactured by Coherent Corp. It features a 1200 V drain-source voltage rating and a 60 A continuous drain current capability. The device utilizes a TO-263-7 surface-mount package, designed for high-efficiency power conversion applications requiring low on-resistance and high thermal stability.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide semiconductor technology for superior thermal performance
- Designed for high-frequency switching operations in power electronics
- Optimized for improved efficiency compared to traditional silicon devices
Single FETs, MOSFETs Applications
- Industrial motor drives
- High-efficiency power supplies
- Automotive power systems
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet version from Coherent Corp or authorized distributors to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with your PCB footprint and thermal management requirements before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications demanding high voltage blocking and low conduction losses. Consider the TO-263-7 package constraints and ensure adequate gate drive circuitry supports the SiC MOSFET switching speed.
Single FETs, MOSFETs Part Context
Coherent Corp specializes in advanced electronic components, including photonics and laser technology. This SiC MOSFET belongs to their power semiconductor portfolio, targeting industrial and automotive markets requiring robust power handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent 1200V SiC MOSFETs with similar current ratings and package types. Verify pinout compatibility and thermal resistance specifications when considering alternative manufacturers.
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