TPC8223-H,LQ(S

Overview

The TPC8223-H,LQ(S) is a dual N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOSII technology to achieve low on-resistance and high switching performance within a compact PS-8 package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 4.7 A. Key electrical parameters include a typical drain-source on-resistance of 14 mΩ and a forward transfer admittance of 8 S. The component operates with an enhancement-mode threshold voltage ranging from 0.8 V to 2.5 V, ensuring reliable switching characteristics for portable equipment applications.

Feature Summary

• Dual N-channel configuration in a small footprint PS-8 package
• Low drain-source on-resistance for efficient power handling
• High forward transfer admittance for improved switching speed
• Low leakage current specifications under defined bias conditions

Applications

• Lithium-ion battery protection circuits
• Portable electronic equipment power management
• Notebook PC internal power distribution

Procurement Notes

Verify the specific suffix LQ(S) against official Toshiba documentation to confirm tape-and-reel packaging details and lead-free compliance status. Ensure the ordering code matches the exact pinout and marking requirements for your assembly process. Cross-reference the manufacturer's latest datasheet revision to confirm active status and any potential design changes.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a PS-8 package. The 40 V rating and 4.7 A current capacity suit low-voltage DC-DC converters and load switches. Evaluate thermal resistance values if operating near maximum current limits. Confirm that the 14 mΩ on-resistance meets the efficiency targets of the target application circuit.

Part Context

This part belongs to Toshiba's U-MOSII series of silicon N-channel MOSFETs. It shares architectural similarities with the TPC8203 and TPC8204 models, offering comparable performance metrics in similar packages. The series is designed to replace older PIE-MOSVI technologies with improved switching speeds and lower conduction losses for modern portable devices.

Replacement Considerations

Direct substitutes include the TPC8203 and TPC8204 from Toshiba Semiconductor. Verify pin compatibility and package dimensions before substitution. Other manufacturers may offer equivalent 40 V dual N-channel MOSFETs in PS-8 packages, but electrical parameter matching is required.