TPCA8008-H(TE12LQM

Single FETs, MOSFETs Overview

The TPCA8008-H is a silicon N-channel MOSFET manufactured by Toshiba Semiconductor and Storage, utilizing MACHⅡπ-MOSⅤ technology. It features a 250 V drain-source voltage (VDSS) rating and supports a continuous DC drain current of 4 A with an 8 A pulsed capability. The device operates in enhancement mode with a gate threshold voltage ranging from 2.0 to 4.0 V. Key electrical characteristics include a typical drain-source ON-resistance of 0.47 Ω at VGS = 10 V and ID = 2 A, and a total gate charge of 10 nC. Thermal resistance from channel to case is 2.78 °C/W. The component is housed in an 8-pin SOP Advance package.

Single FETs, MOSFETs Feature Summary

• High-speed switching performance enabled by low gate charge and optimized internal capacitance.
• Low drain-source ON-resistance for efficient power conduction in switching applications.
• Small footprint achieved through a compact and thin SOP Advance surface-mount package.
• Enhanced reliability with high forward transfer admittance and low leakage current specifications.

Single FETs, MOSFETs Applications

• High-speed switching regulator circuits
• DC/DC converter topologies
• General-purpose high-efficiency switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TE12LQM against the manufacturer's official documentation to confirm packaging type and reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the intended operating conditions remain within the absolute maximum ratings defined in the datasheet to maintain product reliability.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V breakdown voltage and moderate current handling are required for high-frequency switching. The low gate charge makes it suitable for applications demanding fast transition times. Evaluate thermal management requirements based on the specified thermal resistance values and ensure the PCB layout supports the heat dissipation needs of the SOP Advance package.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's discrete semiconductor portfolio, specifically designed as a field-effect transistor for power management. It utilizes advanced MOS technology to balance switching speed and conduction losses. The component is distinct from standard logic-level MOSFETs due to its higher voltage rating and specific thermal characteristics tailored for industrial and consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides or distributor cross-reference tools for verified equivalent parts. Ensure any replacement matches the 250 V rating, 4 A current capacity, and SOP-8 pinout configuration. Verify that alternative components meet the same thermal and electrical performance criteria without altering the circuit design parameters.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating for the TPCA8008-H?

The absolute maximum rating for drain-source voltage (VDSS) is 250 V.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (Vth) typically decreases as the ambient temperature increases, as shown in the Vth vs. Ta characteristic curves in the datasheet.

What is the typical forward transfer admittance of this device?

The typical forward transfer admittance (|Yfs|) is 3.3 S when measured at VDS = 10 V and ID = 2 A.