TPCA8A04-H(TE12L,Q

Description：MOSFET N-CH 30V 44A 8SOP
Series：U-MOSV-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:bcc5b2cc311b Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TPCA8A04-H(TE12L,Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 30V 44A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPCA8A04-H(TE12L,Q

Description：MOSFET N-CH 30V 44A 8SOP
Series：U-MOSV-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5700 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP Advance (5x5)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for TPCA8A04-H(TE12L,Q

TPCA8A04-H(TE12L,Q

Single FETs, MOSFETs Overview

TPCA8A04-H(TE12L,Q) is a Toshiba N-channel MOSFET with Schottky Barrier Diode (NS configuration). It features a U-MOS structure in an SOP Advance package. Key parameters include a drain-source breakdown voltage of 30 V, continuous drain current of 40 A, and typical on-resistance of 3.2 mΩ. The device operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Integrates a Schottky Barrier Diode for enhanced circuit design flexibility
Utilizes U-MOS trench technology for low on-resistance
Provides high-speed switching capabilities

Single FETs, MOSFETs Applications

Synchronous rectification DC-DC converters
Motor driver power circuits
Lithium-ion secondary battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TE12L,Q against official Toshiba documentation to confirm packaging and tape specifications. Ensure compatibility with SOP Advance footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental reports before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring integrated body diode functionality alongside low conduction losses. The 30V rating suits low-voltage systems. Verify thermal management needs due to the 40A current capability in a compact surface-mount package. Check gate charge specifications for switching frequency requirements.

Single FETs, MOSFETs Part Context

This part belongs to the TPCA series, representing SOP Advance packages from Toshiba. It utilizes U-MOS VI-H technology. The NS designation indicates the inclusion of a Schottky Barrier Diode. This series targets high-density portable electronics and power supply applications.