TPCC8002-H(TE12LQM

Single FETs, MOSFETs Overview

The TPCC8002-H is a silicon N-channel MOS field-effect transistor utilizing Toshiba’s U-MOS II-H technology. It features a drain-source voltage of 30 V and a continuous drain current rating of 22 A. The device exhibits a typical drain-source on-resistance of 7.6 mΩ at VGS = 4.5 V and a total gate charge of 27 nC. Key electrical parameters include a gate threshold voltage range of 1.5 to 2.5 V, forward transfer admittance of 65 S, and maximum leakage current of 10 µA. Thermal resistance from channel to case is 4.2 °C/W.

Single FETs, MOSFETs Feature Summary

• High-efficiency switching capability enabled by low gate charge and fast turn-on/turn-off times.
• Low conduction losses achieved through minimized drain-source on-resistance.
• Compact physical footprint provided by the small and thin package design.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converter circuits
• Notebook PC power management systems
• Portable electronic equipment power stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TE12LQM against official Toshiba documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the manufacturing date code aligns with project timelines. Validate that the source document corresponds directly to the manufacturer's official datasheet rather than a distributor summary.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a compact form factor. The low RDS(ON) makes it suitable for efficient power conversion where thermal management is critical. Ensure the gate drive voltage supports the specified thresholds for optimal performance. Consider the avalanche energy ratings if inductive load switching is present in the circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba’s U-MOS II-H series of silicon N-channel MOSFETs. The series is engineered for high-speed switching and high-efficiency power conversion. The TPCC8002-H specifically targets portable electronics and notebook PCs where space constraints and power efficiency are primary design drivers.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Do not assume pin-compatible alternatives without verifying absolute maximum ratings and thermal characteristics. Cross-reference only parts explicitly listed as direct replacements in manufacturer literature.

Single FETs, MOSFETs FAQ

What is the typical gate threshold voltage for the TPCC8002-H?

The gate threshold voltage ranges from 1.5 V to 2.5 V when measured at VDS = 10 V and ID = 1 mA.

How does the drain-source on-resistance vary with gate voltage?

At VGS = 4.5 V, the typical RDS(ON) is 7.6 mΩ. At VGS = 10 V, it decreases to a typical value of 5.5 mΩ.