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The TPCP8407,LF is a dual-channel silicon MOSFET manufactured by Toshiba Semiconductor and Storage. It integrates one N-channel and one P-channel enhancement-mode device within a PS-8 surface-mount package. The component is qualified to AEC-Q101 standards for automotive reliability. Key electrical parameters include a drain-source voltage of ±40 V, continuous drain currents of 5 A (N-channel) and -4 A (P-channel), and low on-resistance values of 29.1 mΩ and 43.7 mΩ respectively at specified gate voltages. Thermal resistance ranges from 84.7 °C/W to 348.8 °C/W depending on operation mode.
Verify the specific ordering suffix against official Toshiba documentation to confirm lead-free status and packaging configuration. Ensure that the procurement channel provides valid traceability data consistent with automotive-grade requirements. Confirm RoHS compliance details directly with the manufacturer or authorized distributor before finalizing orders.
Select this component for designs requiring compact dual-channel integration in mobile or motor control circuits. Evaluate thermal management strategies based on single versus dual operation power dissipation limits. Verify that the required gate drive voltage aligns with the specified threshold and on-resistance test conditions for optimal performance.
This part belongs to Toshiba's U-MOS IV / U-MOS VI series of silicon MOSFETs. It was commercially introduced in May 2013. The PS-8 package provides an eight-pin surface-mount footprint optimized for space-constrained applications while maintaining necessary thermal and electrical isolation between the integrated N-channel and P-channel devices.
Publicly confirmed substitute part numbers are not available in the provided source material.