TPH2R506PL,L1Q

$1.69

Description：MOSFET N-CH 60V 100A 8SOP
Series：U-MOSIX-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:684613d0add7 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

TPH2R506PL,L1Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 60V 100A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPH2R506PL,L1Q

Description：MOSFET N-CH 60V 100A 8SOP
Series：U-MOSIX-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.4mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id：2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5435 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：132W (Tc)
Operating Temperature：175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP Advance (5x5)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for TPH2R506PL,L1Q

TPH2R506PL,L1Q

Single FETs, MOSFETs Overview

The TPH2R506PL is a silicon N-channel MOSFET from Toshiba's U-MOSIX-H series, housed in an SOP Advance package. It features a drain-source voltage of 60 V and a continuous drain current of 160 A. The typical on-resistance is 1.9 mΩ at VGS = 10 V. Key dynamic parameters include a total gate charge of 60 nC and an output charge of 51 nC. The device supports a maximum channel temperature of 175 °C and offers high-speed switching capabilities with low leakage current.

Single FETs, MOSFETs Feature Summary

High-speed switching performance
Low drain-source on-resistance
Small gate and output charges
Low leakage current

Single FETs, MOSFETs Applications

High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the exact packaging configuration, such as reel or cut tape, as these affect handling and storage requirements. Ensure compliance with RoHS directives and check for any regional export restrictions before finalizing procurement. Confirm that the supplier provides valid traceability documentation for quality assurance purposes.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds within a 60 V system. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching transitions and minimize driver power consumption.

Single FETs, MOSFETs Part Context

This part belongs to the U-MOSIX-H family of silicon N-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. The series is designed for high-efficiency power switching applications. The SOP Advance package provides a compact form factor suitable for surface-mount assembly, balancing electrical performance with thermal management needs in modern electronic designs.