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The TPIC1502DW is a monolithic power DMOS array featuring ten electrically isolated N-channel enhancement-mode transistors. It integrates four transistors configured as a full H-bridge and six as a triple half H-bridge. The lower stage of the full H-bridge includes an integrated sense-FET for Class A-B linear operation biasing. Key electrical parameters include a typical drain-to-source on-state resistance (rDS(on)) of 0.25 Ω for the full H-bridge and 0.4 Ω for the triple half H-bridge at VGS = 10 V and ID = 1.5 A. Pulsed drain current reaches 4 A per channel, with a supply voltage rating of 20 V. The device operates over a case temperature range of –40°C to 125°C.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and thermal characteristics. Ensure that the procurement source provides valid traceability for the component. Confirm that the received units match the specified DW package dimensions and pinout configuration before integration into the design.
Select this component when a compact solution combining both H-bridge and half-bridge topologies is required. Consider the 0.25 Ω rDS(on) for efficiency in the full bridge section versus the 0.4 Ω in the half-bridge sections. Evaluate the thermal resistance requirements based on the expected continuous and pulsed current loads to determine adequate heatsinking or PCB copper area.
This component belongs to Texas Instruments' family of power DMOS arrays designed for robust switching performance. It serves as a specialized driver solution for applications needing multiple isolated power stages without discrete transistor assembly. The DW package facilitates surface-mount implementation in space-constrained designs.
No public confirmed substitute part numbers are available in the provided datasheet. Verify compatibility if substituting with other TI power arrays by comparing pinout configurations, rDS(on) values, and maximum voltage ratings.