TPIC1502DW

TPIC1502DW

$1.05
  • Description:MOSFET 20V 1.5A 24SOIC
  • Series:-

SKU:1646e5e34707 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 20V 1.5A 24SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube,Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:-
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.5A
  • Rds On (Max) @ Id, Vgs:300mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:2.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:98pF @ 14V
  • Power - Max:2.86W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:24-SOIC
  • Grade:-
  • Qualification:-

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TPIC1502DW

Overview

The TPIC1502DW is a monolithic power DMOS array featuring ten electrically isolated N-channel enhancement-mode transistors. It integrates four transistors configured as a full H-bridge and six as a triple half H-bridge. The lower stage of the full H-bridge includes an integrated sense-FET for Class A-B linear operation biasing. Key electrical parameters include a typical drain-to-source on-state resistance (rDS(on)) of 0.25 Ω for the full H-bridge and 0.4 Ω for the triple half H-bridge at VGS = 10 V and ID = 1.5 A. Pulsed drain current reaches 4 A per channel, with a supply voltage rating of 20 V. The device operates over a case temperature range of –40°C to 125°C.

Feature Summary

  • Integrates a full H-bridge and a triple half H-bridge within a single monolithic package.
  • Includes an integrated sense-FET in the full H-bridge lower stage to facilitate Class A-B linear operation.
  • Features fast commutation speeds suitable for high-frequency switching applications.

Applications

  • Motor control systems requiring H-bridge configurations.
  • Power amplification circuits utilizing Class A-B linear operation modes.
  • Industrial automation equipment driving resistive or inductive loads.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and thermal characteristics. Ensure that the procurement source provides valid traceability for the component. Confirm that the received units match the specified DW package dimensions and pinout configuration before integration into the design.

Selection Notes

Select this component when a compact solution combining both H-bridge and half-bridge topologies is required. Consider the 0.25 Ω rDS(on) for efficiency in the full bridge section versus the 0.4 Ω in the half-bridge sections. Evaluate the thermal resistance requirements based on the expected continuous and pulsed current loads to determine adequate heatsinking or PCB copper area.

Part Context

This component belongs to Texas Instruments' family of power DMOS arrays designed for robust switching performance. It serves as a specialized driver solution for applications needing multiple isolated power stages without discrete transistor assembly. The DW package facilitates surface-mount implementation in space-constrained designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet. Verify compatibility if substituting with other TI power arrays by comparing pinout configurations, rDS(on) values, and maximum voltage ratings.

TPIC1502DWTPIC1502DW
$1.05
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