TPM2841-03

RF Diode Overview

The DNmicron TPM2841-03 is a silicon Schottky diode housed in an SOT-23 package. It features a maximum reverse voltage of 5 V and a forward current rating of 130 mA. The breakdown voltage is specified at 7 V with a test current of 10 μA. At 1 mA forward current, the forward voltage reaches 260 mV. Diode capacitance measures 0.42 pF at 0 V bias and 1 MHz frequency. Differential forward resistance is 9 Ω at 5 mA and 10 kHz. Operating temperature ranges from -55 °C to +125 °C.

RF Diode Feature Summary

• Designed for RF applications in the VHF/UHF range
• Suitable as a DC bias detector diode
• Optimized for high-speed switching operations
• Ensures high matching between diodes within the package

RF Diode Applications

• Mixer applications in VHF/UHF range
• DC bias detector circuits
• High-speed switching applications

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel availability. Ensure compliance with RoHS standards and Pb-free requirements before procurement. Confirm ESD handling precautions are observed during storage and assembly processes.

RF Diode Selection Notes

Select this component when low capacitance and fast switching are required for VHF/UHF circuits. Verify that the 5 V reverse voltage rating meets system peak voltage limits. Consider the SOT-23 footprint constraints and thermal management capabilities for the intended operating environment.

RF Diode Part Context

This device belongs to the TPM2841 series of silicon Schottky diodes manufactured by DNmicron. The series includes variants like the TPM2841-01 and TPM2841-02, which utilize different packages such as SOD-523. All variants share similar electrical characteristics but differ in physical form factors.

RF Diode Replacement Considerations

Check for compatible silicon Schottky diodes with similar 5 V reverse voltage and sub-1 pF capacitance ratings. Ensure replacement parts support SOT-23 packaging and meet equivalent forward voltage and leakage current specifications for direct substitution.