TPM2850-01

RF Diode Overview

The DNmicron TPM2850-01 is a silicon Schottky diode designed for RF applications in the VHF/UHF range. It serves as a DC bias detector and high-speed switching component. The device is housed in an SOD-523 package. Key electrical parameters include a maximum reverse voltage of 5 V and a forward current rating of 100 mA at 25°C. Breakdown voltage is specified between 5 V and 8 V at 10 μA. Reverse current reaches 0.4 μA at 3 V and 0.7 μA at 4 V. Forward voltage ranges from 210 mV to 410 mV depending on current levels. Diode capacitance is typically 0.31 pF at 0 V bias, with differential forward resistance at 12 Ω.

RF Diode Feature Summary

• High matching degree between diodes when multiple units are mounted in a single surface mount package
• Available in Pb-free RoHS compliant packages including SOD-523, SOT-23, and DFN1006
• ESD protection rated at Class A for Machine Model and Class 0 for Human Body Model

RF Diode Applications

• Mixer applications in VHF/UHF frequency ranges
• DC bias detector circuits
• High-speed switching applications

RF Diode Procurement Notes

Verify the specific package variant during ordering, as the TPM2850 series includes SOD-523, SOT-23, and DFN1006 options. Confirm tape and reel availability if required for automated assembly. Ensure handling precautions for electrostatic sensitive devices are followed during storage and installation to maintain device integrity.

RF Diode Selection Notes

Select the TPM2850-01 specifically for its SOD-523 packaging configuration. Consider the TPM2850-02 or -03 variants if SOT-23 packaging is preferred. Evaluate the low capacitance and fast switching characteristics against circuit requirements for VHF/UHF mixer or detector designs. Verify thermal operating limits within the -55°C to +125°C range for the intended environment.

RF Diode Part Context

The TPM2850-01 belongs to the broader TPM2850 series of silicon Schottky diodes manufactured by DNmicron. This series encompasses multiple package types, including SOT-23 and DFN1006 configurations identified by suffixes such as -02, -03, and -10. All variants share similar core electrical characteristics optimized for RF performance and high-speed switching capabilities.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.