TPM2872

RF Diode Overview

The TPM2872D is a silicon RF Schottky diode designed for high-frequency applications up to 24 GHz. It features a low barrier height, low forward voltage, and low junction capacitance, making it suitable for mixers and detectors in mobile devices and embedded systems. The device is housed in a DFN1006 package (0.6mm x 1mm x 0.475mm) and is lead-free. Key electrical parameters include a maximum reverse voltage of 4 V, a forward current of 100 mA, and a typical capacitance of 0.2 pF at VR=0V and f=1MHz. Operating temperature ranges from -55°C to +150°C.

RF Diode Feature Summary

• Low junction capacitance optimized for high-frequency signal processing
• Compact DFN1006 surface-mount package design
• Lead-free construction compliant with environmental standards

RF Diode Applications

• Mixers in mobile devices
• Detectors in modules and embedded systems

RF Diode Procurement Notes

Verify the specific part number suffix against official documentation to confirm exact specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure handling precautions are followed due to ESD sensitivity. Validate that the DFN1006 package dimensions match your PCB layout requirements. Check for any recent datasheet updates that may affect performance characteristics.

RF Diode Selection Notes

Select this component when designing circuits requiring operation at frequencies up to 24 GHz. Consider the low forward voltage drop for efficiency in signal detection. Ensure the system can handle the 4 V reverse voltage limit. Verify thermal management capabilities within the specified operating temperature range. Evaluate the small form factor suitability for dense PCB layouts in portable electronics.

RF Diode Part Context

The TPM2872D belongs to the TPM2872D series of silicon Schottky diodes manufactured by DNmicron. This series is specifically engineered for RF applications where low capacitance and fast switching are critical. The device utilizes a standard DFN1006 footprint, facilitating integration into modern compact electronic designs without requiring significant board space adjustments.

RF Diode Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Users should consult the manufacturer for potential alternatives if supply constraints arise. Ensure any replacement maintains similar capacitance and voltage ratings for RF mixer/detector functionality.

RF Diode FAQ

What is the maximum operating frequency for the TPM2872D?

The TPM2872D is suitable for applications with frequencies as high as 24 GHz.

What is the typical junction capacitance of the device?

The typical junction capacitance is 0.2 pF at VR=0V and f=1MHz.

What package type does the TPM2872D use?

It uses a DFN1006 package with dimensions of approximately 0.6mm x 1mm x 0.475mm.