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The TQM84KDCU6 RFG is a P-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It features a drain-source voltage (Vdss) of -60 V and a continuous drain current (Id) of -190 mA at 25°C. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 403 mW. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V, a gate charge (Qg) of 1.9 nC at 10 V, and an input capacitance (Ciss) of 38.2 pF at 30 V. The on-resistance (Rds(on)) is specified as 6 ohms at Vgs = 10 V and Id = 190 mA. The component is housed in a SOT-23 package and holds AEC-Q101 automotive qualification.
Verify the specific suffix 'CU6' against the manufacturer's official datasheet to confirm pinout compatibility and exact electrical tolerances. Ensure the ordering code matches the required tape-and-reel configuration. Cross-reference the AEC-Q101 grade level with project specifications to validate automotive suitability before finalizing procurement orders.
Select this component when a -60 V P-channel MOSFET is required for automotive or industrial applications. Verify that the 190 mA continuous current rating meets the load requirements. Check that the 6 ohm on-resistance at 10 V gate drive aligns with the control logic voltage levels available in the target design.
This part belongs to the TQM series of automotive-grade MOSFETs from Taiwan Semiconductor. The series is engineered for high reliability in vehicle electronics. The TQM84KDCU6 variant specifically targets applications requiring compact packaging and robust thermal performance within the -55°C to 150°C operating range.
Consult the manufacturer's substitution guide for direct equivalents. Verify that any alternative P-channel MOSFET maintains the -60 V Vdss rating and SOT-23 footprint. Ensure the replacement also holds AEC-Q101 certification if automotive compliance is mandatory for the application.