TQM84KDCU6 RFG

TQM84KDCU6 RFG

$0.29
  • Description:MOSFET 2P-CH 60V 0.17A SOT363
  • Series:-

SKU:2945d3081221 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 60V 0.17A SOT363
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:38.2pF @ 30V
  • Power - Max:320mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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TQM84KDCU6 RFG

Overview

The TQM84KDCU6 RFG is a P-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It features a drain-source voltage (Vdss) of -60 V and a continuous drain current (Id) of -190 mA at 25°C. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 403 mW. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V, a gate charge (Qg) of 1.9 nC at 10 V, and an input capacitance (Ciss) of 38.2 pF at 30 V. The on-resistance (Rds(on)) is specified as 6 ohms at Vgs = 10 V and Id = 190 mA. The component is housed in a SOT-23 package and holds AEC-Q101 automotive qualification.

Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
  • P-channel MOSFET architecture designed for efficient switching applications with low gate charge requirements.
  • Compact surface-mount SOT-23 packaging suitable for space-constrained circuit board layouts.

Applications

  • Automotive battery backup unit (BBU) power management circuits
  • High-voltage system protection interfaces
  • General-purpose low-power switching loads

Procurement Notes

Verify the specific suffix 'CU6' against the manufacturer's official datasheet to confirm pinout compatibility and exact electrical tolerances. Ensure the ordering code matches the required tape-and-reel configuration. Cross-reference the AEC-Q101 grade level with project specifications to validate automotive suitability before finalizing procurement orders.

Selection Notes

Select this component when a -60 V P-channel MOSFET is required for automotive or industrial applications. Verify that the 190 mA continuous current rating meets the load requirements. Check that the 6 ohm on-resistance at 10 V gate drive aligns with the control logic voltage levels available in the target design.

Part Context

This part belongs to the TQM series of automotive-grade MOSFETs from Taiwan Semiconductor. The series is engineered for high reliability in vehicle electronics. The TQM84KDCU6 variant specifically targets applications requiring compact packaging and robust thermal performance within the -55°C to 150°C operating range.

Replacement Considerations

Consult the manufacturer's substitution guide for direct equivalents. Verify that any alternative P-channel MOSFET maintains the -60 V Vdss rating and SOT-23 footprint. Ensure the replacement also holds AEC-Q101 certification if automotive compliance is mandatory for the application.

TQM84KDCU6 RFGTQM84KDCU6 RFG
$0.29
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