TSM035NB04LCZ C0G

$2.00

Description：40V, 157A, SINGLE N-CHANNEL POWE
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube

SKU:02a4309514a2 Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM035NB04LCZ C0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 40V, 157A, SINGLE N-CHANNEL POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM035NB04LCZ C0G

Description：40V, 157A, SINGLE N-CHANNEL POWE
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：111 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6350 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for TSM035NB04LCZ C0G

TSM035NB04LCZ C0G

Single FETs, MOSFETs Overview

The TSM035NB04LCZ C0G is a single N-channel power MOSFET manufactured by Taiwan Semiconductor. It features a 40V drain-source voltage rating and a maximum on-state resistance of 3.5mΩ at VGS=10V. The device supports a continuous drain current of 157A at TC=25°C and a pulsed drain current of 628A. Total gate charge is typically 110nC. It utilizes a TO-220 package with a junction-to-case thermal resistance of 0.8°C/W. The component is logic level compatible, halogen-free, and RoHS compliant.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability for efficient switching control
Low on-state resistance to minimize conductive losses
Low gate charge optimized for fast power switching applications
100% tested for Unclamped Inductive Switching (UIS) and gate resistance

Single FETs, MOSFETs Applications

BLDC Motor Control
Battery Power Management
DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against the manufacturer's official documentation to confirm packaging details. Confirm that the TO-220 tube packing matches project requirements. Ensure compliance with RoHS standards and halogen-free specifications as defined in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-current switching applications requiring low conduction losses. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance. Consider the logic level gate threshold when designing the driver circuitry to ensure reliable turn-on across the operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the TSM035NB04LCZ series of N-channel power MOSFETs from Taiwan Semiconductor. It is designed for general-purpose power switching where efficiency and thermal performance are critical. The device integrates standard silicon technology within a robust TO-220 package suitable for through-hole mounting.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official cross-reference data for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions.