TSM160P02CS

$0.20

Description：-20, -11, SINGLE P-CHANNEL
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)

SKU:41c3bdce2a76 Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM160P02CS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is -20, -11, SINGLE P-CHANNEL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM160P02CS

Description：-20, -11, SINGLE P-CHANNEL
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2320 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for TSM160P02CS

TSM160P02CS

Single FETs, MOSFETs Overview

The TSM160P02CS is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Taiwan Semiconductor Corporation. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The device is housed in a compact SOT-323 surface-mount package, designed for efficient thermal performance and space-constrained applications. Key electrical characteristics include a drain-source breakdown voltage of -20V and a continuous drain current capability of -160A at room temperature. The component operates within a junction temperature range of -55°C to +175°C, ensuring reliability under varying thermal conditions.

Single FETs, MOSFETs Feature Summary

Utilizes advanced trench MOSFET technology for enhanced performance
Features low gate charge and low input capacitance for high-speed switching
Designed with low on-resistance to minimize conduction losses
Constructed with lead-free packaging compliant with RoHS standards

Single FETs, MOSFETs Applications

DC-DC converters
Motor drivers
Power management circuits
Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix codes against official datasheets to confirm pinout and thermal specifications. Ensure compatibility with automated assembly processes regarding the SOT-323 footprint. Cross-reference manufacturer lot codes for quality assurance. Confirm that the component meets all relevant environmental compliance requirements for the target market before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low on-resistance are critical in a small form factor. Consider the -20V rating for low-voltage power systems. Evaluate thermal dissipation requirements based on the SOT-323 package limitations. Compare gate charge specifications against driving capabilities to ensure optimal switching efficiency in the design.

Single FETs, MOSFETs Part Context

This part belongs to the family of P-Channel MOSFETs from Taiwan Semiconductor. These devices are engineered for general-purpose power switching applications. The trench technology provides superior performance compared to traditional planar structures. The SOT-323 package offers a balance between current capacity and board space efficiency for modern electronic designs.