TSM250NB06DCR RLG

$1.51

Description：MOSFET 2N-CH 60V 7A 8PDFN
Series：-

SKU:0e5213a46575 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 7A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1461pF @ 30V
Power - Max：2W (Ta), 48W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFN (5x6)
Grade：-
Qualification：-

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TSM250NB06DCR RLG

Overview

The TSM250NB06DCR is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN56 Dual package and supports a drain-source voltage of 60V with a continuous drain current of 30A at case temperature. The device achieves a maximum on-resistance of 25mΩ at VGS=10V and 31.6mΩ at VGS=7V. Key electrical parameters include a total gate charge of 22nC, an input capacitance of 1461pF, and a junction-to-case thermal resistance of 2.6°C/W. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual N-Channel configuration for space-efficient designs
Low RDS(ON) characteristics to minimize conductive losses
Optimized gate charge for fast power switching applications
Validated through 100% UIS and Rg testing

Applications

BLDC Motor Control
Battery Power Management
DC-DC Converter
Secondary Synchronous Rectification

Procurement Notes

Verify the specific ordering code TSM250NB06DCR RLG against official Taiwan Semiconductor documentation to confirm the PDFN56 Dual packaging and 2,500pcs reel quantity. Ensure compliance with RoHS standards and IEC 61249-2-21 halogen-free requirements prior to procurement. Cross-reference datasheet version A1908 for accurate specifications.

Selection Notes

Select this component for applications requiring dual N-channel isolation in a compact footprint. Evaluate the 25mΩ on-resistance against thermal constraints, noting the 2.6°C/W junction-to-case thermal resistance. Confirm that the 60V breakdown voltage and 30A current rating align with the system's peak operational demands and duty cycles.

Part Context

This part belongs to the TSMxxxNB0x series of 60V N-Channel MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56 Dual package, distinguishing it from single-channel variants like the TSM130NB06LCR or TSM230N06PQ56. The dual configuration allows for integrated circuit solutions in motor control and power management systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter overlaps with other dual N-channel MOSFETs before considering alternatives.